Design on mixed-voltage-tolerant I/O interface with novel tracking circuits in a 0.13-µm CMOS technology
نویسندگان
چکیده
This paper presents a 1.2V/2.5V tolerant I/O buffer design with only thin gate-oxide devices. The novel floating N-well and gate-tracking circuits in mixed-voltage I/O buffer are proposed to overcome the problem of leakage current, which will occur in the conventional CMOS I/O buffer when using in the mixedvoltage I/O interfaces. The new proposed 1.2V/2.5V tolerant I/O buffer design has been successfully verified in a 0.13-μm salicided CMOS process, which can be also applied in other CMOS processes to serve different mixed-voltage I/O interfaces.
منابع مشابه
Design on new tracking circuit of I/O buffer in 0.13µm cell library for mixed-voltage application
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